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Si4483EDY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 1.0
- 3.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 4.5 V
V DS = 0 V, V GS = ± 25 V
V DS = - 30 V, V GS = 0 V
V DS = - 30 V, V GS = 0 V, T J = 70 °C
V DS = - 5 V, V GS = - 10 V
- 30
±1
± 10
-1
- 10
μA
mA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = - 10 V, I D = - 14 A
V GS = - 4.5 V, I D = - 11 A
V DS = - 15 V, I D = - 14 A
0.007
0.0115
60
0.0085
0.014
Ω
S
Diode Forward Voltage
a
V SD
I S = - 2.7 A, V GS = 0 V
- 0.74
- 1.1
V
Dynamic b
Turn-On Delay Time
t d(on)
10
15
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = - 15 V, R L = 15 Ω
I D ? - 1 A, V GEN = - 10 V, R g = 6 Ω
20
42
50
30
65
80
μs
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
100
10
6
4
1
0.1
T J = 150 °C
T J = 25 °C
0.01
2
0.001
0
0.0001
0
5
10
15
20
25
30
0
6
12
18
24
30
www.vishay.com
2
V GS - Gate-to-Source Voltage (V)
Gate-Current vs. Gate-Source Voltage
V GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Document Number: 72862
S-83038-Rev. D, 22-Dec-08
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